technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/534 t4-lds-0038 rev. 2 (081508) page 1 of 2 devices levels 2n5002 2n5004 jan jantx jantxv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 80 v collector-base voltage v cbo 100 v emitter-base voltage v ebo 5.5 v collector current i c i c (3) 5.0 10 a total power dissipation @ t a = +25c (1) @ t c = +25c (2) p t 2.0 58 w operating & storage junction temperature range t j , t stg -65 to +200 c thermal resistance, junction-to case r jc 3.0 c/w thermal resistance, junction-to ambient r ja 88 c/w note: 1) derate linearly 11.4 mw/c for t a > +25c 2) derate linearly 331 mw/c for t c > +25c 3) this value applies for p w 8.3 ms, duty cycle 1% electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off characteristics collector-emitter breakdown voltage i c = 100madc v (br)ceo 80 vdc collector-emitter cutoff current v ce = 40vdc, i b = 0 i ceo 50 adc collector-emitter cutoff current v ce = 60vdc, v be = 0vdc v ce = 100vdc, v be = 0vdc i ces 1.0 1.0 adc madc emitter-base cutoff current v be = 4.0vdc, i c = 0 v be = 5.5vdc, i c = 0 i ebo 1.0 1.0 madc to-59
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon transistor qualified per mil-prf-19500/534 t4-lds-0038 rev. 2 (081508) page 2 of 2 dynamic characteristics parameters / test conditions symbol min. max. unit forward-current transfer ratio i c = 50madc, v ce = 5.0vdc i c = 2.5adc, v ce = 5.0vdc i c = 5.0adc, v ce = 5.0vdc 2n5002 20 30 20 --- 90 --- i c = 50madc, v ce = 5.0vdc i c = 2.5adc, v ce = 5.0vdc i c = 5.0adc, v ce = 5.0vdc 2n5004 h fe 50 70 40 --- 200 --- base-emitter voltage non-saturated v ce = 5.0vdc, i c = 2.5adc v be 1.45 vdc collector-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v ce(sat) 0.75 1.5 vdc base-emitter saturation voltage i c = 2.5adc, i b = 250madc i c = 5.0adc, i b = 500madc v be(sat) 1.45 2.2 vdc dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small-signal short-circuit. forward current transfer ratio i c = 500ma, v ce = 5.0vdc, f = 10mhz 2n5002 2n5004 |h fe | 6.0 7.0 output capacitance v cb = 10vdc c obo 250 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time i c = 5adc; i b1 = 500madc t on 0.5 s storage time i b2 = -500madc t s 1.4 s fall time v be(off) = 3.7vdc t f 0.5 s turn-off time r l = 6 t off 1.5 s safe operating area dc tests t c = +25c, v ce = 0, tp = 1s, 1 cycle test 1 v ce = 12vdc, i c = 5.0adc test 2 v ce = 32vdc, i c = 1.7adc test 3 v ce = 80vdc, i c = 100madc
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